FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 200V
Gate-Source Voltage VGS ± 20
Continuous Drain Current VGS at 10 V
TC = 25 °C ID18
TC = 100 °C 11 A
Pulsed Drain Currenta IDM 72
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energyb EAS 580 mJ
Repetitive Avalanche Currenta IAR 18 A
Repetitive Avalanche Energya EAR 13 mJ
Maximum Power Dissipation TC = 25 °C PD 125 W
Peak Diode Recovery dV/dtc dV/dt 5.0 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C
Soldering Recommendations (Peak Temperature) for 10 s 300d
Mounting Torque 6-32 or M3 screw
10 lbf · in
1.1 N · m

Categorie appartenenza : ricambi elettronici,semiconduttori,transistor mos,mos fet,jfet,mosfet